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International Studies: Limitations of InGaN quantum wells in LEDs

Jan 25, 2018

Indium nitride (InGaN) is a key material for Blu-ray LEDs, and a recent international team has published a core mechanism for the limitation of Indium (indium) content in gallium nitride films, which was published in the journal Physical Review Materials in the month of this year.

In order for the third group of nitride LEDs to emit red and green light in RGB three primary colors, indium content in gallium nitride quantum well (Quantum Wells) is usually increased. But recent research has found that the traditional method of indium content does not produce efficient red LEDs and green LEDs.


Despite the progress of green LEDs and laser technology, the researchers were unable to overcome the 30% limit of indium in gallium nitride, and the reason was not clear whether it was affected by the growth environment or the basic factors. Until January this year, the international team of German, Polish and Chinese researchers explained the issue of indium content limitation and further explained the mechanism of this limitation.

The study noted that the scientists challenged the limit of indium content and then grew the indium nitride (InN) single atom layer on gallium nitride, but the results showed that the concentration of indium remained at 25% to 30% and could not continue to rise, indicating that the limit of indium content was not affected by the environment, It is the limited mechanism of the inn itself.

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The researchers used advanced atomic-resolution transmission electron microscopy (transmission electron microscope,tem), reflective high-energy electron diffraction (Reflection high-energy electron, RHEED), it was found that when the indium content reached 25%, the single layer of gallium nitride was arranged in a uniform arrangement, that is, indium single atom column and two gallium atom column alternating.

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