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Kaust University Research And Development Of Nano-AlGaN Light-emitting Devices, Is Expected To Enhance UV LED Performance

Aug 07, 2018

Researchers have developed a nano-scale Grinsch polar body with a graded refractive index (Grinsch) device, and researchers expect to be able to use the nano-efficient UV LED devices in the future, such as lasers, optical sensors, amplitude modulation, and optical-related devices. The existing AlGaN light-emitting device is considered to be a UV lamp source that replaces the existing UV laser and the UV lamp containing the toxic substance. However, due to the UV laser diode in the device, the voltage must be at least 25 volts to operate, coupled with the poor efficiency of the injection layer, resulting in series resistance high, resulting in limited performance.


The reason is related to the P-type semiconductor coating of AlGaN aluminum layer and the lack of effective heat dissipation pipe. The nano-scale AlGaN and the original AlGaN film layer, because the surface area of high volume ratio, the formation of effective stress relaxation, can be directly in the matrix, including metal extension. Metals and metal substrates, which are clad in silicon or sapphire, can provide better heat dissipation piping during high current operation. In addition, nano-grade P-type semiconductors because of the addition of magnesium, activation energy demand is low, so the resistance is relatively small. A team of researchers has confirmed that the Grinsch polar body is excellent in both electron and optical performance, and that the required voltage and series resistors are also lower than those of the original two-polar bodies.